Hf-based high-k dielectrics for p-Ge MOS gate stacks

作者：Fadida Sivan^*; Palumbo Felix; Nyns Laura; Lin Dennis; Van Elshocht Sven; Caymax Matty; Eizenberg Moshe

来源：Journal of Vacuum Science and Technology B, 2014, 32(3): 03D105.

DOI：10.1116/1.4837295

The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electrical measurements combined with x-ray photoelectron spectroscopy chemical bonding analysis and band alignment determination were conducted in order to assess the suitability of hafnium-based high-k for this kind of gate stacks, with emphasis on low density of interface states and border traps. HfAlOx was found to be the most promising high-k from those studied. The authors have also found that the current-voltage trends for the various systems studied can be explained by the band alignment of the samples obtained by our x-ray photoelectron spectroscopy analysis.

• 出版日期2014-5