Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

作者：Marshall Andrew Robert Julian^*; Vines Peter; Ker Pin Jern; David John P R; Tan Chee Hing

来源：IEEE Journal of Quantum Electronics, 2011, 47(6): 858-864.

DOI：10.1109/JQE.2011.2128299

• Avalanche photodiode
• electron-avalanche photodiode
• impact ionization
• InAs
• ionization coefficient
• MWIR
• SWIR

The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.

• 出版日期2011-6