Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit

作者：Kim Jun Ho; Moon Yoon Jong; Kim Sun Kyung; Yoo Young Zo; Seong Tae Yeon^*

来源：Ceramics International, 2015, 41(10): 14805-14810.

DOI：10.1016/j.ceramint.2015.08.001

• Al-doped ZnO
• Ag
• Multilayer film
• Transparent conducting electrode

In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93% at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87 x 10(22) to 6.36 x 10(21) cm(-3), while the sheet resistance slightly increased from 3.86 to 4.47 Omega sq(-1) and the charge mobility increased from 24.15 to 25.42 cm(2) V-1 s(-1). The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 am. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9 x 10(-3) Omega(-1).

• 出版日期2015-12