An output-capacitor-free low-dropout regulator with subthreshold slew-rate enhancement technique

作者：Zeng, Yanhan^*; Xu, Yuankun; Zeng, Miaowang; Tan, Hong Zhou

来源：MICROELECTRONICS JOURNAL, 2014, 45(6): 708-718.

DOI：10.1016/j.mejo.2014.04.012

• Output-capacitor-free
• Low-dropout (LDO) regulator
• Transient response
• Slew-rate enhancement

A low power output-capacitor-free low-dropout (LDO) regulator, with subthreshold slew-rate enhancement technique, has been proposed and simulated using a standard 0.181 mu m CMOS process in this paper. By utilizing such a technique, proposed LDO is able to achieve a fast transient response. Simulation results verify that the recovery time is as short as 7 us and the maximum undershoot and overshoot are as low as 55 mV and 30 my, respectively. In addition, the slew-rate enhancement circuit works in the subthreshold region at steady state, and proposed LDO consumes a 46.4-mu A quiescent current to provide a maximum 100-mA load with a minimum 0.2-V dropout voltage. Besides, excellent line and load regulations are obtained and the values are 0.37 mV/V and 2 mu V/mA, respectively.

• 出版日期2014-6
• 单位中山大学