Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs

作者：DasGupta Sandeepan^*; McMorrow Dale; Reed Robert A; Schrimpf Ronald D; Boos J Brad; Ramachandran Vishwa

来源：IEEE Transactions on Nuclear Science, 2010, 57(6): 3262-3266.

DOI：10.1109/TNS.2010.2075941

• AlSb/InAs
• charge collection
• high electron mobility transistors (HEMT)
• single event
• TCAD

We investigate the dependence of the single-event response of AlSb/InAs HEMTs on details of the doping, layer thicknesses, and contamination levels. The transconductance depends on the Delta-doping and layer thickness, which are shown to have the maximum impact on charge collection when the device is biased near the pinch-off voltage. In the on condition (near zero gate bias), the effect is minimal. The possible role of carbon contamination near the substrate-buffer heterointerface in reducing some of the longer transients is discussed.

• 出版日期2010-12