A design guideline of parasitic inductance for preventing oscillatory false triggering of fast switching GaN-FET

作者：Umetani Kazuhiro^*; Yagyu Keisuke; Hiraki Eiji

来源：IEEJ Transactions on Electrical and Electronic Engineering, 2016, 11(S2): S84-S90.

DOI：10.1002/tee.22339

• GaN-FET
• false triggering
• switching noise
• parasitic inductance
• self-oscillation
• self turn-on

Gallium nitride field-effect transistors (GaN-FETs) are attractive devices because of its low on-state resistance and fast switching capability. However, they can suffer from false triggering caused by fast switching. Particularly, a disastrous oscillation of repetitive false triggering can occur after a turn-off, which may deteriorate the reliability of power converters. To address this issue, we give a design guideline to prevent this phenomenon. We analyze a simple circuit model to derive the condition of occurrence of this phenomenon, which is then verified experimentally. Results show that the parasitic inductance of the gating circuit, L-g, and that of the decoupling circuit, L-d, should be designed so that the LC resonance frequency of L-g and the gate-source capacitance of the GaN-FET does not coincide with that of L-d and the drain-source capacitance, respectively.

• 出版日期2016-12