Hydrogen anion and subgap states in amorphous In-Ga-Zn-O thin films for TFT applications

作者：Bang Joonho; Matsuishi Satoru; Hosono Hideo^*

来源：Applied Physics Letters, 2017, 110(23): 232105.

DOI：10.1063/1.4985627

Hydrogen is an impurity species having an important role in the physical properties of semiconductors. Despite numerous studies, the role of hydrogen in oxide semiconductors remains an unsolved puzzle. This situation arises from insufficient information about the chemical state of the impurity hydrogen. Here, we report direct evidence for anionic hydrogens bonding to metal cations in amorphous In-Ga-Zn-O (a-IGZO) thin films for thin-film transistors (TFT) applications and discuss how the hydrogen impurities affect the electronic structure of a-IGZO. Infrared absorption spectra of self-standing a-IGZO thin films prepared by sputtering reveal the presence of hydrogen anions as a main hydrogen species (concentration is similar to 10(20) cm(-3)) along with the hydrogens in the form of the hydroxyl groups (similar to 10(20) cm(-3)). Density functional theory calculations show that bonds between these hydride ions with metal centers give rise to subgap states above the top of the valence band, implying a crucial role of anionic hydrogen in the negative bias illumination stress instability commonly observed in a-IGZO TFTs. Published by AIP Publishing.

• 出版日期2017-6-5