Analytical modeling simulation and characterization of short channel Junctionless Accumulation Mode Surrounding Gate (JLAMSG) MOSFET for improved analog/RF performance

作者：Trivedi Nitin; Kumar Manoj; Haldar Subhasis; Deswal S S; Gupta Mridula; Gupta R S^*

来源：Superlattices and Microstructures, 2016, 100: 1263-1275.

DOI：10.1016/j.spmi.2016.11.009

• Accumulation mode MOSFET
• Analytical model
• Junctionless
• Superposition techniques
• Surrounding gate

An analytical model for Junctionless Accumulation Mode Surrounding Gate (JLAMSG) MOSFET is developed using superposition technique. The model incorporates source/drain and channel depletion for an accurate analysis. The device parameter dependent electrostatic center potential, drain current (IDs) and subthreshold slope (SS) have been evaluated. The numerical simulation results using ATLAS-3D device simulator are in good agreement with the results obtained from the developed analytical model. A comparative assessment between Junctionless (JL) and Junctionless Accumulation Mode ULAM) Surrounding Gate (SG) devices for analog/RF performance is also carried out. The superiority of JLAMSG MOSFET over Junctionless Surrounding Gate (JLSG) is discussed for Analog and RF application.

• 出版日期2016-12