A collector current model for InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with non-ideal effects

作者：Chang Yang Hua; Huang Chun Teng

来源：Microelectronics Reliability, 2012, 52(7): 1328-1331.

DOI：10.1016/j.microrel.2012.03.007

A collector current model incorporating electron diffusion in the base and thermionic emission at the abrupt B-E heterojunction is derived and applied to InGaAsSb heterojunction bipolar transistors (HBTs). Parameters extracted from the model include effective base doping concentration, conduction band discontinuity (Delta E-C) at the base-emitter junction, and emitter resistance. The calculated current from the model is consistent with the measured result. It is found that a high collector current ideality factor is resulted from a nonzero Delta E-C and a low effective base doping concentration. Moreover, a nonzero Delta E-C makes the high-injection effect almost invisible in collector current characteristics, even if it actually exists.

• 出版日期2012-7