Drain E-Field Manipulation in AlGaN/GaN HEMTs by Schottky Extension Technology

作者：Lian Yi Wei^*; Lin Yu Syuan; Lu Hou Cheng; Huang Yen Chieh; Hsu Shawn S H

来源：IEEE Transactions on Electron Devices, 2015, 62(2): 519-524.

DOI：10.1109/TED.2014.2382558

• Breakdown voltage
• GaN-on-Si
• high-electron mobility transistor (HEMT)
• leakage current
• Schottky contact

The proposed hybrid Schottky-ohmic drain structure is analyzed in detail for AlGaN/GaN power high-electron mobility transistors on the Si substrate. Without any additional photomasks and process steps, the hybrid drain design can alter the electric field distribution to improve the breakdown voltage V-BK. In addition, it provides an additional current path to achieve zero onset voltage and reduce the ON-resistance. It was found that the Schottky extension L-ext is critical to V-BK, R-ON, and also the current collapse phenomena of the transistors. The extended Schottky electrodes for optimized transistor characteristics are investigated, and the physics behind are discussed. With an L-ext similar to 2-3 mu m, V-BK can be improved up to 60% with an R-ON degradation below 3%.

• 出版日期2015-2
• 单位清华大学