A programmable ferroelectric single electron transistor

作者：Liu Lu^*; Narayanan Vijay; Datta Suman

来源：Applied Physics Letters, 2013, 102(5): 053505.

DOI：10.1063/1.4791601

We experimentally demonstrate a programmable ferroelectric single electron transistor using direct monolithic integration of a multi-gate III-V (In0.7Ga0.3As) quantum well field effect transistor with a composite ferroelectric (lead zirconium titanate) and high-k (hafnium dioxide) gate stack. A split gate electrode configuration allows electrical tuning of the tunnel barrier profile and reconfigurable programming of the device to operate in both classical and Coulomb blockade mode. The ferroelectric gate stack under the split gate electrode further allows non-volatile operation in both modes. This demonstration is a significant step towards realization of a non-volatile, programmable binary decision diagram logic circuit for ultra low power operation.

• 出版日期2013-2-4