Anomalous Hall effect in epitaxial permalloy thin films

作者：Zhang Y Q; Sun N Y; Shan R; Zhang J W; Zhou S M; Shi Z^*; Guo G Y

来源：Journal of Applied Physics, 2013, 114(16): 163714.

DOI：10.1063/1.4827198

Anomalous Hall effect (AHE) of epitaxial permalloy thin films grown on MgO (001) substrates is investigated. The longitudinal conductivity independent term (i.e., the sum of intrinsic and side-jump contributions) of the anomalous Hall conductivity (AHC) is found to be much smaller than those of Fe and Ni films. Band theoretical calculations of the intrinsic AHC as a function of the number of valence electrons (band filling) indicate that the AHC of the permalloy is in the vicinity of sign change, thus resulting in the smallness of the intrinsic AHC. The contribution of the phonon scattering is found to be comparable to that of the impurity scattering. This work suggests that the permalloy films are ideal systems to understand the AHE mechanisms induced by impurity scattering.

• 出版日期2013-10-28
• 单位同济大学