Geiger-mode operation of back-illuminated GaN avalanche photodiodes

作者:Pau J L; McClintock R; Minder K; Bayram C; Kung P; Razeghi M*; Munoz E; Silversmith D
来源:Applied Physics Letters, 2007, 91(4): 041104.
DOI:10.1063/1.2759980

摘要

The authors report the Geiger-mode operation of back-illuminated GaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back illumination in order to enhance hole-initiated multiplication. The spectral response in Geiger-mode operation was analyzed under low photon fluxes. Single photon detection capabilities were demonstrated in devices with areas ranging from 225 to 14063 mu m(2). Single photon detection efficiency of 20% and dark count rate < 10 kHz were achieved in the smallest devices.