A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor

作者：Cheli Martina^*; Fiori Gianluca; Iannaccone Giuseppe

来源：IEEE Transactions on Electron Devices, 2009, 56(12): 2979-2986.

DOI：10.1109/TED.2009.2033419

• Analytical model
• band-to-band tunneling
• field-effect transistors (FETs)
• graphene bilayer

Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space in order to design a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic transport assumptions, takes into account bilayer-graphene tunable gap and self-polarization and includes all band-to-band tunneling current components, which are shown to represent the major limitation to transistor operation, because the achievable energy gap is not sufficient to obtain a large I-on/I-off ratio.

• 出版日期2009-12