Deposition of MnO Anode and MnO2 Cathode Thin Films by Plasma Enhanced Atomic Layer Deposition Using the Mn(thd)(3) Precursor

作者：Mattelaer Felix^*; Vereecken Philippe M; Dendooven Jolien; Detavernier Christophe

来源：Chemistry of Materials, 2015, 27(10): 3628-3635.

DOI：10.1021/acs.chemmater.5b00255

Atomic layer deposition (ALD) of a wide range of Mn oxides (MnO to MnO2) is demonstrated by combining the Mn(thd)(3) (tris(2,2,6,6-tetramethy1-3,5-heptanedionato)-manganese) precursor with different types of plasma activated reactant gases. Typical ALD behavior is found with hydrogen, ammonia, and water plasma, with a fully precursor controlled temperature window (from 140 to 250 degrees C) and constant growth rate (0.022 +/- 0.001 nm/cyde). A purely ligand-exchange chemistry would predict Mn2O3 films with the transition metal in the +III state. However, it is found that the nature of the processgas or -plasma, more specific its oxidizing/reducing character, largely determines the oxidation state of the grown films. Our approach provides an effective method for the deposition of MnO2(+IV), Mn3O4(+II/+III), and MnO(+II) based on the Mn(thd)(3)(+III) precursor. All as-deposited films are found to be smooth (<1.2 nm rms roughness), crystalline and with <6% impurities. The resulting films are tested as lithium-ion battery electrodes, showing the MnO2 and the MnO films as possible candidate thin-film cathode and anode, respectively.

• 出版日期2015-5-26