科研之友
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摘要
The resistive switching behaviors of metal-oxide-metal nanoscale devices are a fascinating phenomenon for next generation nonvolatile memories. Herein for the first time we demonstrate nanoscale memristive devices made from a FeWO4 nanowires array. The device shows superior bipolar resistive switching behaviors. This study is useful for exploring the multifunctional materials and their applications in nonvolatile multistate memory devices.
- 出版日期2014-6-3
- 单位西南大学
