Degradation analyses of GaInP/GaAs/Ge solar cells irradiated by 70 keV and 150 keV protons by current-voltage curves under various intensities of light

作者：Guo Hongliang; Shi Linfeng; Wu Yiyong^*; Sun Qiang; Yu Hui; Xiao Jingdong; Guo Bin

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2018, 431: 1-5.

DOI：10.1016/j.nimb.2018.06.019

• GaInP/GaAs/Ge solar cells
• Proton radiation degradation
• Current-voltage analysis under various
• intensities of lights
• Ideality factor
• Shunt resistance

Low energy protons damage GaInP/GaAs/Ge solar cells seriously. Traditional degradation researches require many supplementary tests, such as quantum efficiency (QE) or photoluminescence (PL). In this paper, we would establish a method that could analysis degradation of solar cells without any other equipment except a solar simulator. A voltage-current analysis technique under various intensities (X) of light was developed to study the degradation mechanisms of proton-irradiated GaInP/GaAs/Ge solar cells. Sum of ideality factor of every sub-cell Zn i could be calculated from the change of open circuit voltage (V-oc) with light intensities in multi junction solar cells. The change of ideality factor shows significant increase of Shockley-Read-Hall (SRH) recombination after 70 keV and 150 keV protons irradiation. Shunt resistance R-sh increases with intensities, which is different from silicon solar cells. The change of Rm with light intensities was used to describe the current mismatch among the sub-cells in the multijunction solar cell. After irradiation, the current mismatch becomes larger. The relative degradation rate is different under different intensities of light. The max-power degradation tends to be smaller at high intensities.

• 出版日期2018-9-15
• 单位哈尔滨工业大学; 中国电子科技集团公司第十八研究所