Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures

作者：Lenz A^*; Tournie E; Schuppang J; Daehne M; Eisele H

来源：Applied Physics Letters, 2013, 102(10): 102105.

DOI：10.1063/1.4795020

Buried GaAs depositions in a GaSb(001) matrix with a few monolayers (ML) thickness form nanometer size tensile-strained agglomerations. Cross-sectional scanning tunneling microscopy reveals in case of 1 ML and 2 ML GaAs lateral sizes of about 5-6 nm and heights of about 6-8 ML, while in the case of 3 ML and 4 ML GaAs deposition the lateral sizes increase to 9-11 nm and the heights to about 8-11 ML. The stoichiometry of the nanostructures is intermixed with the GaSb matrix material, particularly for low amounts of deposited GaAs. This investigation exhibits defect free growth of GaAs/GaSb(001) and demonstrates promising perspectives for future developments in the Ga(In)As/GaSb(001) system.

• 出版日期2013-3-11