A novel highly reliable and low-power radiation hardened SRAM bit-cell design

作者：Lin, Dianpeng^*; Xu, Yiran; Liu, Xiaonian; Zhu, Wenyi; Dai, Lihua; Zhang, Mengying; Li, Xiaoyun; Xie, Xin; Jiang, Jianwei; Zhu, Huilong; Zhang, Zhengxuan; Zou, Shichang

来源：IEICE Electronics Express, 2018, 15(3): 20171129.

DOI：10.1587/elex.15.20171129

• single event upset
• radiation hardened SRAM cell (RHSC)
• multiple-node upset
• static random access memory (SRAM)

In this paper, an improved SEU hardened SRAM bit-cell, based on the SEU physics mechanism and reasonable circuit-design, is proposed. The proposed SRAM cell can offer differential read operation for robust sensing. By using 90 nm standard digital CMOS technology, the simulation results show that the SRAM cell can provide full immunity for single node upset and multiple-node upset. And its critical charge is 25 times compared with Quatro10T. Besides, by comparing several electrical parameters, the proposed SRAM cell has the highly reliable and low-power capability for severe radiation environment application.

• 出版日期2018-2-10
• 单位中国科学院大学; 中国科学院上海微系统与信息技术研究所