HfOx Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

作者：Lee Heng Yuan^*; Chen Pang Shiu; Wu Tai Yuan; Chen Yu Sheng; Chen Fred; Wang Ching Chiun; Tzeng Pei Jer; Lin C H; Tsai Ming Jinn; Lien Chenhsin

来源：IEEE Electron Device Letters, 2009, 30(7): 703-705.

DOI：10.1109/LED.2009.2021004

• AlCu
• HfOx
• resistive random access memory (RRAM)
• trap and detrap

A novel method of fabricating HfOx-based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (> 10(5) cycles), robust data retention at high temperature, and fast operation speed (< 50 ns), have been demonstrated. The resistive memory based on AlCu/HfOx stacked layer in this letter shows promising application in the next generation of nonvolatile memory.

• 出版日期2009-7
• 单位中国科学院电工研究所; 清华大学