A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

作者：Chen Min Cheng^*; Chen Hao Yu; Lin Chia Yi; Chien Chao Hsin; Hsieh Tsung Fan; Horng Jim Tong; Qiu Jian Tai; Huang Chien Chao; Ho Chia Hua; Yang Fu Liang

来源：Sensors (Switzerland), 2012, 12(4): 3952-3963.

DOI：10.3390/s120403952

• nano-sensor fabrication
• nanowire FET
• nonvolatile memories
• semiconductive sensors

This paper reports a versatile nano-sensor technology using %26quot;top-down%26quot; poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (%26gt;2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.

• 出版日期2012-4
• 单位长春大学