科研之友
微信
新浪微博
Facebook
分享链接
摘要
A ferroelectric tunnel junction based on the piezoelectric effect mechanism, which not only overcomes the drawbacks concerning retention time and polarization switching in the ferroelectric tunnel junction based on the electrostatic effect, but also suggests a new design concept for compact ferroelectric tunnel junction solid-state memories for next-generation information technology devices.
- 出版日期2013
- 单位湘潭大学
