摘要

A new technique for rapid polishing chemical-vapor-deposited (CVD) diamond films at low temperatures is developed. Using this technique, the diamond films were polished effectively under certain conditions via the thermochemical reaction between diamond (C) and Ce-Mn alloys melted with rare earth Cerium (Ce) and transitional metal Manganese (Mn), which have high carbon solubility. The influence of alloy composition on the removal rate and surface roughness (Ra) of the diamond films has been discussed thoroughly, and the surface of polished films was characterized by scanning electronic microscopy (SEM) and Raman spectra. The results indicate the alloys with low Mn content are inclined to obtain well-polished diamond films, whether for removal rate or for polishing effect. After the film was polished at 600 degrees C for 2 h by Ce-3%Mn alloy, the Ra value of film is decreased from 10.8490 mu m to 3.6826 mu m and the polishing rate can reach 37.5 mu m/h. The adding of proper Mn does not only lower the polishing temperature, but also obtain well-polished effect, so it optimizes the process of thermochemical polishing. Moreover, this technique cannot destroy the surface quality of diamond films.