摘要

Bulk MgB2 samples added with 0, 2, 5, 10 and 15 wt% of SiC nanoparticles were prepared by a powder-in-sealed-tube (PIST) method. XRD analysis shows the presence of secondary phase Mg2Si and some unreacted SiC as impurities in MgB2 matrix in SiC added samples. The a axis length decreases with increasing SiC doping level which is mainly due to carbon substitution at boron site which causes local strains in MgB2 lattice. From SEM analysis, it is found that as the addition level of SiC increases the sharpness of MgB2 grain boundaries loses and more grains coalesce to form bigger molten-like grains. DC magnetization measurements show systematic variations in T-C and Delta T-C as SiC doping increases. The in-

  • 出版日期2009-9-18