Abnormal current-voltage characteristics and metal-insulator transition of amorphous Fe-doped carbon films on Si substrates

作者：Huang Liubin; Hao Lanzhong; Yan Keyou; Xue Qingzhong^*

来源：Physica B: Condensed Matter , 2008, 403(19-20): 3434-3438.

DOI：10.1016/j.physb.2008.05.004

• Carbon films
• Electrical properties
• Metal-insulator transition
• Raman spectrum

Amorphous Fe-0.05-C-0.95 films have been deposited on n-type Si substrates using direct current magnetron sputtering. The structure and electrical properties of the films/Si are investigated. The film/Si deposited at room temperature exhibits abnormal current-voltage (I-V) characteristics, whose current increases slowly at first, and then increases to a very large value when the voltage reaches a threshold. However, the l-V curves of the film on Si substrate deposited at 200 degrees C are almost linear. In addition, the temperature dependence of the resistance of the film/Si shows a metal-insulator transition and the transition temperature can be hugely modulated by increasing the external bias voltage. Finally, we propose a possible model to interpret the abnormal electrical properties of the film/Si.

• 出版日期2008-10-1
• 单位中国石油大学（北京）