Analytical solution of fundamental surface potential equations for symmetric double-gate metal-oxide-semiconductor field-effect transistors

作者：Chang Sheng; Wang Gaofeng^*; Huang Qijun; Wang Hao

来源：International Journal of Electronics, 2009, 96(9-10): 1023-1038.

DOI：10.1080/00207210902977822

• surface potential
• symmetric double-gate metal-oxide-semiconductor field-effect transistor
• analytical solution

Both the fundamental surface potential equations for undoped and doped symmetric double-gate MOSFETs are transcendental equations with exponentials, to which a general analytical solution is introduced. Given the lowest potential in the channel film, this solution can calculate the surface potentials of both undoped and doped symmetric double-gate MOSFETs accurately. This analytical approach could also be applied to solve other similar device equations with exponential transcendent structures.

• 出版日期2009-10
• 单位武汉大学