A model for the spectral blueshift caused by the In-N clusters in InxGa1-xNyAs1-y (x < 0.4 and y <= 0.04) after annealing

作者：Zhao, Chuan-Zhen^*; Li, Na-Na; Wei, Tong; Wang, Sha-Sha; Lu, Ke-Qing

来源：Physica B: Condensed Matter , 2013, 420: 24-27.

DOI：10.1016/j.physb.2013.03.033

• InGaNAs
• Band-anticrossing model
• Blueshift
• Annealing

A model describing the spectral blueshift of the quaternary alloy InxGa1-xNyAs1-y (x<0.4 and y <= 0.04) caused by the In-N clusters after annealing is developed by modifying the band-anticrossing (BAC) model. In the modified BAC model, we consider the effect of the added In-N clusters after annealing on the parameters in the band anticrossing model. It is found that the variation of the N level can be considered to be proportional to the variation of the average number of the nearest-neighbor In atoms per N atom, and the variation of the coupling interaction between the N level and the F conduction band is determined by the added In-N bonds and the In content. The obtained results are in agreement well with the experimental data. It is very helpful to explain the essence of the blueshift caused by annealing.

• 出版日期2013-7-1
• 单位中国民航大学; 天津工业大学