A COMPACT, 36 TO 72 GHz 15.8 dBm POWER AMPLIFIER WITH 66.7% FRACTIONAL BANDWIDTH IN 45 nm SOI CMOS

作者：Tai Wei; Ricketts David S^*

来源：Microwave and Optical Technology Letters, 2014, 56(1): 166-169.

DOI：10.1002/mop.28062

• power amplifier
• millimeter-wave
• CMOS
• wideband

A 36 to 72 GHz wideband power amplifier (PA) in 45-nm silicon-on-insulator CMOS is presented. The PA adopts a two-stage cascode topology, in which counterposed resonances in the matching networks enable a 3-dB output power bandwidth of 36 GHz. This bandwidth represents a 66.7% fractional bandwidtha 1.8X improvement over previously reported CMOS V-band PAs. At 62 GHz, the PA achieves a peak output power of 15.8 dBm, a gain of 16.9 dB, and 9.4% power-added efficiency using a 2.2-V supply. The PA has the largest output power and smallest die area among reported wideband (BW>30%) millimeter-wave PAs in CMOS.

• 出版日期2014-1