AlGaAs ridge laser with 33% wall-plug efficiency at 100 degrees C based on a design of experiments approach

作者：Fecioru Alin; Boohan Niall; Justice John; Gocalinska Agnieszka; Pelucchi Emanuele; Gubbins Mark A; Mooney Marcus B; Corbett Brian^*

来源：Semiconductor Science and Technology, 2016, 31(4): 045002.

DOI：10.1088/0268-1242/31/4/045002

• semiconductor lasers
• high temperature
• TCAD
• AlGaAs
• simulation
• modelling

Upcoming applications for semiconductor lasers present limited thermal dissipation routes demanding the highest efficiency devices at high operating temperatures. This paper reports on a comprehensive design of experiment optimisation for the epitaxial layer structure of AlGaAs based 840 nm lasers for operation at high temperature (100 degrees C) using Technology Computer-Aided Design software. The waveguide thickness, Al content, doping level, and quantum well thickness were optimised. The resultant design was grown and the fabricated ridge waveguides were optimised for carrier injection and, at 100 degrees C, the lasers achieve a total power output of 28 mW at a current of 50 mA, a total slope efficiency 0.82 W A(-1) with a corresponding wall-plug efficiency of 33%.

• 出版日期2016-4