AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers

作者：Chiu Hsien Chin; Chen Shang Cyun; Chiu Jiun Wei; Li Bo Hong; Wang Hou Yu; Peng Li Yi; Wang Hsiang Chun; Hsueh Kuang Po^*

来源：Microelectronics Reliability, 2018, 83: 238-241.

DOI：10.1016/j.microrel.2017.05.034

• AIN
• GaN
• AIGaN
• Schottky barrier diode
• Fe-doped
• Buffer layer

This study demonstrated AlGaN/GaN Schottky barrier diodes (SBDs) for use in high-frequency, high-power, and high-temperature electronics applications. Four structures with various Fe doping concentrations in the buffer layers were investigated to suppress the leakage current and improve the breakdown voltage. The fabricated SBD with an Fe-doped AlGaN buffer layer of 8 x 10(17) cm(-3) realized the highest on-resistance (R-ON) and turn-on voltage (V-ON) because of the memory effect of Fe diffusion. The optimal device was the SBD with an Fe-doped buffer layer of 7 x 10(17) cm(-3), which exhibited a R-ON of 31.6 m Omega-cm(2), a V-ON of 12 V, a breakdown voltage of 803 V, and a buffer breakdown voltage of 758 V. Additionally, the low-frequency noise decreased when the Fe doping concentration in the buffer layer was increased. This was because the electron density in the channel exhibited the same trend as that of the Fe doping concentration in the buffer layer.

• 出版日期2018-4
• 单位长春大学