Deposition mechanism and characterizations of CuInS2 film prepared by one-step electro-deposition

作者:Li, Libo*; Gao, Guanxiong; Li, Qi; Ma, Yue; You, Jun; Liu, Changfa; Wang, Heng
来源:Journal of Materials Science: Materials in Electronics , 2016, 27(2): 2108-2113.
DOI:10.1007/s10854-015-3998-8

摘要

CuInS2 films had been prepared on FTO using a one-step deposition method, with sodium citrate complexing agent. The film was deposited from the solution containing 20 mmol L-1 CuSO4, 7.5 mmol L-1 In2S3O12, 75 mmol L-1 Na2S2O3 and 8.5 mmol L-1 Na3C6H5O7 for 1200 s. The films were characterized by the UV-visible absorption spectroscopy, SEM, AFM, XRD, XPS methods. By the cyclic voltammetry curves of Cu, S, Cu-S, In, In-S, Cu-In-S, the mechanism of CuInS2 deposition was gotten, that is, the reduction reaction of Cu and In occured, and then S was under potential deposition.