A light-modified ferroelectric resistive switching behavior in Ag/BaMoO4/FTO device at ambient temperature

作者：Zhao W X; Sun B; Liu Y H; Wei L J; Li H W; Chen P^*

来源：Journal of Solid State Chemistry, 2014, 220: 32-36.

DOI：10.1016/j.jssc.2014.08.010

• Ag/BaMoO4/FTO device
• Resistive switching
• Light-modified
• Polarization reversed

BaMoO4 powder was prepared by a facile hydrothermal synthesis. And the BaMoO4/FTO device was fabricated by a spin-coated method, in which the thickness of BaMoO4 layer is about 20 mu m. The bipolar resistive switching effect has been observed in Ag/BaMoO4/FTO device. Moreover, the resistive switching effect of the device is greatly improved by white light irradiation. The resistive switching behavior is explained by the polarization reversal that changes the charge distribution and modulates the Schottky barriers.

• 出版日期2014-12
• 单位西南大学