科研之友
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摘要
We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-kappa dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by %26gt;400% as temperature increased from room temperature to 250 degrees C. Low gate leakage was maintained for prolonged exposure at 100 degrees C but increased significantly at temperatures %26gt; 200 degrees C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required.
- 出版日期2014-7
