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摘要
This paper describes a fully integrated power amplifier (PA) in 100nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and each unit PA has four stages to improve the gain while ensuring stability from dc to the operating frequencies. A 4-way zero-degree combiner (in the unit PA) and a 2-way lambda/2 combiner are used to boost the output power. Occupying 5mm(2), the proposed PA achieves an output power of 0.45Wwith 17.9% PAE at 74GHz.
- 出版日期2018
- 单位东南大学; 移动通信国家重点实验室
