An Ultra Low-Power Dual-Band IR-UWB Transmitter in 130-nm CMOS

作者：Batur Okan Zafer^*; Akdag E; Akkurt H K; Oncu A; Koca M; Dundar G

来源：IEEE Transactions on Circuits and Systems II-Express Briefs, 2012, 59(11): 701-705.

DOI：10.1109/TCSII.2012.2218474

• CMOS
• digital
• dual band
• impulse radio
• low power
• pulse generator
• radio-frequency (RF) integrated circuit
• transmitter
• ultrawideband (UWB)

In this brief, a 0-960-MHz/3.1-5-GHz dual-band ultra low-power impulse-radio ultrawideband transmitter is presented. The pulse transmitter integrated circuit is fabricated using a 130-nm CMOS process with the core die area of 0.1 mm(2). At 1-MHz pulse repetition frequency, the power consumption values are measured in the lower and the upper bands as 5.6 and 31 mu W, respectively. The lower and the upper band "off-time" power consumptions of the transmitter are 0.36 and 1.7 mu W, respectively. The dc-to-radio-frequency conversion efficiencies are 11.1% in the lower band and 4.8% in the upper band.

• 出版日期2012-11