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摘要
A simple small-signal equivalent circuit based on the physical structure of silicon-on-insulator metal-oxidesemiconductor field-effect transistor varactor for substrate loss effects is presented in this paper. The model includes a BSIMSOI charge formulation and physical geometry and process parameter based on parasitic modeling. Key device performances of capacitance and quality factor are validated over voltage, frequency, and geometry. The model, implemented in Verilog-A, provides robust and accurate radiofrequency simulation of metal-oxide-semiconductor varactor.
- 出版日期2017-4
- 单位杭州电子科技大学
