Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits

作者：Udugampola UNK^*; McMahon RA; Udrea F; Sheng K; Amaratunga GAJ; Narayanan EMS; Hardikar S; De Souza MM

来源：IEE Proceedings - Circuits, Devices and Systems, 2004, 151(3): 203-206.

DOI：10.1049/ip-cds:20040447

The dual gate lateral inversion layer emitter transistor (DGLILET) is a versatile device with controlled carrier injection and ultra-fast switching capability. The DGLILET has improved trade-off between the on-state and turn-off losses, enabling the performance of high voltage integrated circuits (HVICs) to be enhanced by reducing overall losses at switching frequencies over approximately 10kHz. This paper focuses on the use of the DGLILET in these applications and demonstrates experimental results of the fabricated devices confirming the enhanced performance.

• 出版日期2004-6
• 单位rutgers