N-TiO2 nanoparticles embedded in silica prepared by Ti ion implantation and annealing in nitrogen

作者：Xiang, X.^*; Chen, M.; Ju, Y. F.; Zu, X. T.; Wang, L. M.; Zhang, Y.

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2010, 268(9): 1440-1445.

DOI：10.1016/j.nimb.2010.01.023

• N-doped TiO2
• Ion implantation
• Annealing
• Optical absorption

Room-temperature Ti ion implantation and subsequent thermal annealing in N-2 ambience have been used to fabricate the anatase and rutile structured N-doped TiO2 particles embedded in the surface region of fused silica. The Stopping and Range of Ions in Matter (SRIM) code simulation indicates a Gaussian distribution of implanted Ti, peaked at similar to 75 nm with a full width at half maximum of similar to 80 nm. However, the transmission electron microscopy image shows a much shallower distribution to depth of similar to 70 nm. Significant sputtering loss of silica substrates has occurred during implantation. Nanoparticles with size of 10-20 nm in diameter have formed after implantation. X-ray photoelectron spectroscopy indicates the coexistence of TiO2 and metallic Ti in the as-implanted samples. Metallic Ti is oxidized to anatase TiO2 after annealing at 600 degrees C, while rutile TiO2 forms by phase transformation after annealing at 900 degrees C. At the same time, N-Ti-O, Ti-O-N and/or Ti-N-O linkages have formed in the lattice of TiO2. A red shift of 0.34 eV in the absorption edge is obtained for N-doped anatase TiO2 after annealing at 600 degrees C for 6 h. The absorbance increases in the ultraviolet and visible waveband.

• 出版日期2010-5-1
• 单位电子科技大学