科研之友
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摘要
Recent findings in nanodeformation of semiconductors posed a dilemma whether the nanoscale plasticity starts with phase transformation or nucleation of dislocations in a stressed nanovolume. In this letter we demonstrate the results of nanoindentation experiments with different loading rate, which enable us to conclude on a mechanism of incipient plasticity. The recorded nanodeformation response of GaAs and Si contrasts that observed for either GaN or metallic Fe crystal, which supports the phase transformation nature of the GaAs incipient plasticity. The derived relationship between the energy barrier for defect nucleation and applied stress served as a verification of the obtained results.
- 出版日期2013-8-12
