Memory effect in silicon time-gated single-photon avalanche diodes

作者：Dalla Mora A; Tosi A; Contini D^*; Di Sieno L; Boso G; Villa F; Pifferi A

来源：Journal of Applied Physics, 2015, 117(11): 114501.

DOI：10.1063/1.4915332

We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called "memory effect" is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

• 出版日期2015-3-21