UltravioletLight-Based Current-Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in beta-Ga2O3 FETs

作者：Bae, Hagyoul; Noh, Jinhyun; Alghamdi, Sami; Si, Mengwei; Ye, Peide D.^*

来源：IEEE Electron Device Letters, 2018, 39(11): 1708-1711.

DOI：10.1109/LED.2018.2871801

• beta-Ga2O3 FET
• wide bandgap
• power device
• donor-like trap states
• acceptor-like trap states
• differential ideality factor
• photonic current
• sub-threshold current

A novel technique is proposed for the simultaneous extraction of energy distribution of donor- and acceptor-like interface trap states [D-it_D(E) and D-it_A(E)] over a wide range of bandgap energy using deep UV light with sub-bandgap (E-ph = h nu < E-g) photons less than the bandgap of the beta-gallium oxide (beta-Ga2O3) channel material in the beta-Ga2O3 field-effect transistors. In the proposed technique, we characterized D-it_D(E) and D-it_A(E) separately based on the difference in the gate voltage (V-GS)-dependent ideality factors [d Delta eta(V-GS)/dV(GS)] for the photoresponsive carriers excited from D-it_D(E) and D-it_A(E) under two different regions (V-ON < V-GS < V-FB and V-FB < V-GS < V-T) in the subthreshold operation.

• 出版日期2018-11