Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model

作者：Sarkar Angsuman^*; De Swapnadip; Dey Anup; Sarkar Chandan Kumar

来源：Journal of Computational Electronics, 2012, 11(2): 182-195.

DOI：10.1007/s10825-012-0396-9

• Cut-off frequency (f(T))
• Maximum frequency of oscillation (f(max))
• Pseudo 2-D modeling
• RF applications
• SRG MOSFET
• Surface potential
• Transconductance generation factor (TGF)

We report a systematic, quantitative investigation of analog and RF performance of cylindrical surrounding-gate (SRG) silicon MOSFET. To derive the model, a pseudo-two-dimensional (2-D) approach applying Gauss%26apos;s law in the channel region is extended for the cylindrical SRG MOSFET. Based on surface potential approach, expressions of drain current and differential capacitances are obtained analytically. Analog/RF figures of merit of SRG MOSFET are studied, including transconductance efficiency g(m)/I-d, intrinsic gain, output resistance, cutoff frequency f(T), maximum oscillation frequency f(max) and gain bandwidth product GBW. The trends related to their variations along the downscaling of dimension are provided. In order to validate our model, the modeled predictions have been extensively compared with the simulated characteristics obtained from the ATLAS device simulator and a nice agreement is observed with a wide range of geometrical parameters.

• 出版日期2012-6