Microstructural study of SnO2 thin layers deposited on sapphire by sol-gel dip-coating

作者：Hamd W; Wu Y C; Boulle A; Thune E; Guinebretiere R^*

来源：Thin Solid Films, 2009, 518(1): 1-5.

DOI：10.1016/j.tsf.2009.05.053

• Tin oxide
• Microstructure
• Sol-gel deposition
• X-ray diffraction
• Atomic force microscopy
• Annealing

Tin oxide (SnO2) films have been grown onto (006) sapphire substrates by sol-gel dip-coating using tin alkoxide solutions. It is shown, using grazing-incidence X-ray diffraction, reciprocal space mapping and atomic force microscopy, that thermal annealing at 500 degrees C induces the crystallization of SnO2 in the rutile-type phase. Further annealing treatments at temperatures lower than 1100 degrees C give rise to slow grain growth controlled by surface diffusion, whereas rapid grain growth (controlled by an evaporation-condensation mechanism) takes place at temperatures higher than 1100 degrees C. Concomitantly, the film splits into isolated islands and a fibre texture occurs at higher temperatures.

• 出版日期2009-11-2