Numerical calculations of the electron mobility of n-GaN

作者：Alfaramawi K^*

来源：Optoelectronics and Advanced Materials-Rapid Communications, 2010, 4(7): 922-924.

• Relaxation time
• Mobility
• Impurity scattering
• Lattice scattering

Calculations of the electron mobility of n-type GaN have been carried out at different temperatures using the relaxation time approximation method. In this temperature range a number of possible scattering mechanisms was discussed. Neutral impurity, ionized impurity and acoustic phonon scattering types were considered. The mobility due to piezoelectric acoustic phonon scattering was assumed to be negligible at high temperatures.

• 出版日期2010-7
• 单位南宁师范大学