Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

作者：Nakahara K^*; Akasaka S; Yuji H; Tamura K; Fujii T; Nishimoto Y; Takamizu D; Sasaki A; Tanabe T; Takasu H; Amaike H; Onuma T; Chichibu S F; Tsukazaki A; Ohtomo A; Kawasaki M

来源：Applied Physics Letters, 2010, 97(1): 013501.

DOI：10.1063/1.3459139

• doping profiles
• II-VI semiconductors
• light emitting diodes
• magnesium compounds
• molecular beam epitaxial growth
• nitrogen
• p-n heterojunctions
• semiconductor doping
• semiconductor growth
• semiconductor thin films
• surface morphology
• ultraviolet spectra
• wide band gap semiconductors
• zinc compounds

We have grown nitrogen-doped MgxZn1-xO:N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH3 gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration (similar to 1x10(19) cm(-3)). The heterosructures of MgxZn1-xO:N (0.1 < x < 0.4)/ZnO were fabricated into light emitting diodes of 500-mu m-diameter. We observed ultraviolet near-band-edge emission (lambda similar to 382 nm) with an output power of 0.1 mu W for a NO-plasma-doped LED and 70 mu W for a NH3-doped one at a bias current of 30 mA.

• 出版日期2010-7-5