N@C-60 quantum bit engineering

作者:Harneit W*; Huebener K; Naydenov B; Schaefer S; Scheloske M
来源:Physica Status Solidi B-Basic Solid State Physics, 2007, 244(11): 3879-3884.
DOI:10.1002/pssb.200776193

摘要

We report on some engineering aspects in the context of utilizing N@C-60 molecules as quantum bits. Multi-step recycling HPLC leads to 100% pure material. Symmetry breaking environments provide full addressing of the high-dimensional Hilbert space. ATM-tip induced local anodic oxidation of silicon can be used for arrangements of fullerenes on surfaces. Finally, electrically detected magnetic resonance is capable of coherent manipulation and read-out of spin evolution of fullerenes at room temperature.

  • 出版日期2007-11