Development of highly stable hydrogenated amorphous silicon films for application in solar cells

作者：Lei, QS^*; Wu, ZM; Xi, JP; Geng, XH; Zhao, Y; Sun, J

来源：International Journal of Modern Physics B, 2006, 20(14): 2035-2047.

DOI：10.1142/S0217979206033309

• a-Si : H films
• a-Si : H solar cells
• stability
• VHFPECVD

Highly stable hydrogenated amorphous silicon (a-Si:H) films were developed by very high frequency plasma enhanced chemical vapor deposition (VHF PECVD). Their electrical and structural properties were studied. The films were applied as i-layers for p - i - n solar cells. The stability of intrinsic films as well as solar cells was studied. Results suggest that a-Si:H films prepared at high hydrogen dilution ratio (R) and low plasma power (P-W) have low hydrogen content (C-H) and small microstructure factor (R-H) and show high stability against light illumination. The device with i-layer prepared at P-W = 5 W and R = 10 shows a high stability with degradation in fill factor and efficiency of 3.23% and 11.64%, respectively, over 1000 hours illumination. However, the device with i-layer prepared at higher plasma power (P-W = 25 W) and lower hydrogen dilution ratio (R = 5) was much less stable. The stability of the devices is directly related to the stability of the intrinsic materials.

• 出版日期2006-6-10
• 单位上海交通大学; 南开大学