First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substrates

作者：Lucovsky G^*; Kim J W; Nordlund D

来源：Microelectronic Engineering, 2013, 109: 370-373.

DOI：10.1016/j.mee.2013.03.031

• Ng-HfO2 and TiO2
• Non-crystalline Hf Si oxynitrides
• Vacated O-site defects
• X-ray absorption spectroscopy (XAS)
• X-ray photoemission spectroscopy (XPS)
• C-V and J-V device measurements

Three significant issues with respect to the ultimate scaling limitations of CMOS devices are (i) the channel or transport material, (ii) high-kappa compatible gate stacks: (a) the interface with the semiconductor substrate; (b) the high dielectrics, and (c) the gate metal, and (iii) the topological structure, planar, nano-tube, or in, etc. Two of these are high-lighted, focusing on (i) crystalline Ge, and transition metal dielectrics including specifically non-crystalline Hf Si oxynitrides, and nano-grain (a) ultra-thin 2 nm thick HfO2 and TiO2. The research has demonstrated shallow trap interfacial slow trap densities of similar to 5 x 10(10) cm(-2), no detectable negative bulk fixed charges, and symmetric N- and P-MOCAPS in planar geometries. EOT values <0.5 nm were obtained for low-leakage current for N-MOSCAPS with ng-TiO2 in contact with plasma processed c-Ge substrates.

• 出版日期2013-9