摘要
Tantalum-doped TiO(2) films were deposited on glass at 300 degrees C by pulsed laser deposition (PLD). After post-annealing in vacuum (similar to 10(-4) Pa) at temperatures ranging from 450 degrees C to 650 degrees C, these films were crystallized into an anatase TiO2 structure and presented good conductive features. With increasing annealing temperature up to 550 degrees C, the resistivity of the films was measured to be around 8.7 x 10(-4) Omega.cm. Such films exhibit high transparency of over 80% in the visible light region. These results indicate that tantalum-doped anatase TiO(2) films have a great potential as transparent conducting oxides.
- 出版日期2011-11
- 单位南京航空航天大学