AN INVESTIGATION INTO THE ADMITTANCE OF MIS-STRUCTURES BASED ON MBE HgCdTe WITH QUANTUM WELLS

作者：Dzyadukh S M^*; Voitsekhovskii A V; Nesmelov S N; Dvoretskii S A; Mikhailov N N; Gorn D I

来源：Russian Physics Journal, 2013, 56(7): 778-784.

DOI：10.1007/s11182-013-0099-0

• MIS-structure
• HgCdTe
• admittance
• quantum well
• molecular-beam epitaxy

The results of investigations into the complex admittance of the MIS-structures based on heteroepitaxial MBE Hg1-x Cd (x) Te with quantum wells (QW) in the test-signal frequency range 1 kHz - 2 DeHz at temperatures 8-300 K are reported. The thickness of single HgTe QWs was 5.6 and 7.1 nm, the content in the 35-nm thick barrier layers - 0.65 and 0.62, respectively.

• 出版日期2013-12